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Toshiba’s Newly Launched 1200V and 1700V Silicon Carbide MOSFET Modules will Contribute to Smaller, More Efficient Industrial Equipment

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V and drain current rating of 600A; and “MG400V2YMS3,” with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.

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